Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21741995

Export

Selection :

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1―xGex Layers

Author
ALPTEKIN, Emre1 ; KIRKPATRICK, Casey Joe1 ; MISRA, Veena1 ; OZTURK, Mehmet C1
[1] Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911, United States
Source

I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1220-1227, 8 p ; ref : 22 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Platinum germanide PtGe PtSiGe Schottky barrier height SiGe platinum germanosilicide platinum silicide
Keyword (fr)
Alliage semiconducteur Barrière Schottky Canal p Contrainte compression Fonction exponentielle Hauteur barrière Nanoélectronique Niveau Fermi Résistance contact Résistance parasite Résistance série Structure surface Transistor MOSFET Travail sortie
Keyword (en)
Semiconductor alloys Schottky barrier p channel Compressive stress Exponential function Barrier height Nanoelectronics Fermi level Contact resistance Parasitic resistance Series resistance Surface structure MOSFET Work function
Keyword (es)
Barrera Schottky Canal p Tensión compresión Función exponencial Altura barrera Nanoelectrónica Nivel Fermi Resistencia contacto Resistencia parásita Resistencia en serie Estructura superficie Función de trabajo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21741995

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web