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Carrier Multiplication in Semiconductor Quantum Dots Due to Inseparable Successive Scatterings

Author
MOSKALENKO, Sveatoslav1 ; DOBINDA, Igor1 ; STEFAN, Angela1 ; PAVLENKO, Vladimir1 ; LELYAKOV, Igor1
[1] Institute of Applied Physics of the Academy of Sciences of Moldova, Academiei str. 5, Chisinau, 2028, Moldova, Republic of
Issue title
A Special Issue on Electron and Phonon Properties of Nanostructures
Author (monograph)
POKATILOV, Evghenii P (Editor)1
[1] Department of Physics, State University of Moldova, Moldova, Republic of
Source

Journal of nanoelectronics and optoelectronics. 2009, Vol 4, Num 1, pp 137-146, 10 p ; ref : 18 ref

ISSN
1555-130X
Scientific domain
Electronics; Optics
Publisher
American Scientific Publishers, Stevenson Ranch, CA
Publication country
United States
Document type
Article
Language
English
Author keyword
Carrier Multiplication Semiconductor Quantum Dots
Keyword (fr)
Bande conduction Bande interdite Bande valence Diffusion Coulomb Moment dipolaire Ordre 2 Ordre 3 Point quantique semiconducteur Théorie perturbation Transfert électron 8107T
Keyword (en)
Conduction bands Energy gap Valence bands Coulomb scattering Dipole moments Second order Third order Semiconductor quantum dots Perturbation theory Electron transfer
Keyword (es)
Orden 2 Orden 3
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21789736

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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