Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
- Author
- LI, X. V1 ; HUSAIN, M. K1 ; KIZIROGLOU, M1 ; DE GROOT, C. H1
[1] School of Electronics and Computer Science, University of Southampton, Nano Research Group, Room 3006, Building 53, SO17 1BJ Southampton, United Kingdom - Conference title
- Proceedings of the 16th International Conference Insulating Films on Semiconductors
- Conference name
- Insulating Films on Semiconductors. International Conference (16 ; Cambridge 2009-06-28)
- Author (monograph)
- ROBERTSON, J (Editor)1 ; HALL, S (Editor)1
[1] Cambridge University and Liverpool University, United Kingdom - Source
Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1599-1602, 4 p ; ref : 16 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Electrodeposition Schottky barriers
- Keyword (fr)
- Barrière Schottky Capacité électrique Caractéristique courant tension Courant fuite Dépôt électrolytique Ecart type Emission thermoionique Fabrication microélectronique Haute performance Hauteur barrière Mesure température Niveau Fermi Semiconducteur type n Technologie NMOS Température ambiante Transistor MOSFET Valeur moyenne
- Keyword (en)
- Schottky barrier Capacitance Voltage current curve Leakage current Electrodeposition Standard deviation Thermionic emission Microelectronic fabrication High performance Barrier height Temperature measurement Fermi level n type semiconductor NMOS technology Room temperature MOSFET Mean value
- Keyword (es)
- Barrera Schottky Capacitancia Característica corriente tensión Corriente escape Depósito electrolítico Desviación típica Emisión termoiónica Fabricación microeléctrica Alto rendimiento Altura barrera Medida temperatura Nivel Fermi Semiconductor tipo n Tecnología NMOS Temperatura ambiente Valor medio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21815291
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2009.03.097 
https://dx.doi.org/10.1016/j.mee.2009.03.097
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