In-situ cyclic pulse annealing of InN on AIN/Si during IR-lamp-heated MBE growth
- Author
- SUZUKI, Akira1 ; YU BUNGI2 ; ARAKI, Tsutomu2 ; NANISHI, Yasushi2 ; MORI, Yasuaki3 ; YAMAMOTO, Hiroaki4 ; HARIMA, Hiroshi4
[1] Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
[2] Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
[3] EpiQuest, Inc., 51 Nakagawara, Kamitoba, Minami-ku, Kyoto 601-8042, Japan
[4] Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan - Conference title
- Proceedings of the 2nd International Symposium on Growth of III Nitrides
- Conference name
- International Symposium on Growth of III Nitrides (2 ; Izu 2008-07-06)
- Author (monograph)
- KOUKITU, Akinori (Editor)1 ; AMANO, Hiroshi (Editor)2 ; FUJIOKA, Hiroshi (Editor)3
[1] Graduate School of Engineering, Tokyo University of Agriculture & Technology, Japan
[2] Faculty of Science and Technology, Meijo University, Japan
[3] Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan - Source
Journal of crystal growth. 2009, Vol 311, Num 10, pp 2776-2779, 4 p ; ref : 5 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 68.55.Jk 78.30.Fs A1 A3 B1 B2 Crystal structure Molecular beam epitaxy Nitrides Raman spectroscopy Semiconducting III-V materials X-ray diffraction
- Keyword (fr)
- Composé III-V Diagramme rotation Diffraction RX Diffusion Raman Dépendance température Effet rayonnement Epaisseur couche Epitaxie jet moléculaire Gouttelette Grosseur grain Microscopie électronique balayage Mécanisme croissance Nitrure d'indium Oxyde de silicium Perfection cristalline Quartz Recuit thermique Semiconducteur III-V Silicium Spectre Raman Spectrométrie Raman Structure cristalline Température recuit 6166 6855J 8110A 8115H InN Si Substrat silicium
- Keyword (en)
- III-V compound Rocking curve XRD Raman scattering Temperature dependence Radiation effects Layer thickness Molecular beam epitaxy Droplets Grain size Scanning electron microscopy Growth mechanism Indium nitride Silicon oxides Crystal perfection Quartz Thermal annealing III-V semiconductors Silicon Raman spectra Raman spectroscopy Crystal structure Annealing temperature
- Keyword (es)
- Compuesto III-V Diagrama rotación Difusión Ramán Espesor capa Mecanismo crecimiento Indio nitruro Perfección cristalina Recocido térmico Temperatura recocido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21815427
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2009.01.006 
https://dx.doi.org/10.1016/j.jcrysgro.2009.01.006
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