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Point defects along metallic atomic wires on vicinal Si surfaces: Si(557)-Au and Si(553)-Au

Author
KANG, Pil-Gyu1 ; JIN SUNG SHIN1 ; HAN WOONG YEOM1
[1] Institute of Physics and Applied Physics, Center for Atomic Wires and Layers, Yonsei University, Seoul 120-749, Korea, Republic of
Source

Surface science. 2009, Vol 603, Num 16, pp 2588-2593, 6 p ; ref : 41 ref

CODEN
SUSCAS
ISSN
0039-6028
Scientific domain
General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Gold Scanning tunneling microscopy Scanning tunneling spectroscopy Silicon Surface defects
Keyword (fr)
Défaut ponctuel Défaut surface Fil quantique Microscopie tunnel balayage Métal transition Or Silicium Spectrométrie tunnel balayage Surface vicinale Au Si
Keyword (en)
Point defects Surface defect Quantum wires Scanning tunneling microscopy Transition elements Gold Silicon Scanning tunneling spectroscopy Vicinal surface
Keyword (es)
Defecto superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21843168

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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