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Recent developments of wide-bandgap semiconductor based UV sensors

Author
BENMOUSSA, A1 ; SOLTANI, A2 ; BENMOUSSA, B4 ; BOLSEE, D8 ; HERMANS, C8 ; KROTH, U9 ; LAUBIS, C9 ; MORTET, V4 ; DE JAEGER, J. C2 ; GIORDANENGO, B1 ; RICHTER, M9 ; SCHOLZE, F9 ; SCHÜHLE, U3 ; HOCHEDEZ, J. F1 ; HAENEN, K4 ; CHONG, Y. M5 ; ZHANG, W. J5 ; DAHAL, R6 ; LIN, J. Y6 7 ; JIANG, H. X6 7 ; BARKAD, H. A2
[1] Royal Observatory of Belgium, Solar Terrestrial Center of Excellence (STCE), Circular Avenue 3, 1180 Brussels, Belgium
[2] Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN/CNRS 8520), Avenue Poincaré, cité scientifique, 59652 Villeneuve d'Ascq, France
[3] Max-Planck-Institut für Sonnensystemforschung, 37191 Katlenburg-Lindau, Germany
[4] Hasselt University, Institute for Materials Research (IMO). Wetenschapspark 1, 3590 Diepenbeek, Belgium
[5] Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong-Kong
[6] Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601, United States
[7] Nano-Tech Center and Dept. of ECE. Texas Tech University, Lubbock, TX 79409-3102, United States
[8] Belgium Institute for Space Aeronomy (BISA), Circular Avenue 3, 1180 Brussels, Belgium
[9] Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
Conference title
Proceedings of Diamond 2008, the 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
Conference name
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (19 ; Sitges 2008-09-07)
Author (monograph)
ROBERTSON, John (Editor)1 ; KAWARADA, Hiroshi (Editor)2 ; KOHN, Erhard (Editor)3 ; HAMERS, Robert (Editor)4
[1] Engineering Department, Cambridge University, 9 JJ Thomson Ave, Cambridge CB3 0FA, United Kingdom
[2] Waseda University, Tokyo, Japan
[3] University of Ulm, Germany
[4] University of Wisconsin-Madison, United States
Source

Diamond and related materials. 2009, Vol 18, Num 5-8, pp 860-864, 5 p ; ref : 37 ref

ISSN
0925-9635
Scientific domain
Crystallography
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
MSM Solarblind UV photodetector WBGM
Keyword (fr)
Caractéristique courant tension Composé III-V Courant obscurité Diamant Durée vie Détecteur UV Effet rayonnement Nanomatériau Nitrure d'aluminium Nitrure de bore Photodétecteur Réseau cubique Semiconducteur bande interdite large Tension amorçage 6180 7361 8105U 8560G AlN BN
Keyword (en)
Voltage current curve III-V compound Dark current Diamond Lifetime Ultraviolet detector Radiation effect Nanostructured materials Aluminium nitride Boron nitride Photodetector Cubic lattices Wide band gap semiconductors Breakdown voltage
Keyword (es)
Característica corriente tensión Compuesto III-V Corriente obscuridad Diamante Tiempo vida Detector UV Efecto radiación Aluminio nitruro Boro nitruro Fotodetector Voltaje perforación
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A80 Physical radiation effects, radiation damage

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21853765

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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