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Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)

Author
RINUS TEK PO LEE1 ; DONG ZHI CHI2 ; YEO, Yee-Chia1
[1] Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
[2] Institute of Materials Research and Engineering, Singapore 119260, Singapore
Source

I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 7, pp 1458-1465, 8 p ; ref : 38 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
External resistance FinFET Schottky barrier platinum germanosilicide
Keyword (fr)
Alliage semiconducteur Barrière Schottky Canal court Canal p Etude comparative Evaluation performance Hauteur barrière Stabilité thermique Technologie autoalignée Transistor MOSFET Transistor effet champ Transistor grille double
Keyword (en)
Semiconductor alloys Schottky barrier Short channel p channel Comparative study Performance evaluation Barrier height Thermal stability Self aligned technology MOSFET Field effect transistor Dual gate transistor
Keyword (es)
Barrera Schottky Canal corto Canal p Estudio comparativo Evaluación prestación Altura barrera Estabilidad térmica Tecnología rejilla autoalineada Transistor efecto campo Transistor de compuerta doble
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21884674

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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