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Effect of hydrogen doping in ZnO thin films by pulsed DC magnetron sputtering

Author
YOUNG RAN PARK1 ; KIM, Juno2 ; YOUNG SUNG KIM3
[1] Department of Advanced Technology Fusion, Konkuk University, 1 Hwayang-dong, Gwangjin-ku, Seoul 143-701, Korea, Republic of
[2] Device Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong, P.O. Box 107, Daejeon 305-600, Korea, Republic of
[3] Advanced Material Process of Information Technology, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
Source

Applied surface science. 2009, Vol 255, Num 22, pp 9010-9014, 5 p ; ref : 34 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
FT-IR Film Hydrogen effect Micro Raman Shallow donors Zinc oxide (ZnO)
Keyword (fr)
Composé de métal de transition Composé minéral Couche mince Croissance film Donneur Hydrogène Magnétron Oxyde de zinc Pulvérisation cathodique H O Zn ZnO
Keyword (en)
Transition element compounds Inorganic compounds Thin films Film growth Donors Hydrogen Magnetrons Zinc oxide Cathode sputtering
Keyword (es)
Zinc óxido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21896394

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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