Effect of hydrogen doping in ZnO thin films by pulsed DC magnetron sputtering
- Author
- YOUNG RAN PARK1 ; KIM, Juno2 ; YOUNG SUNG KIM3
[1] Department of Advanced Technology Fusion, Konkuk University, 1 Hwayang-dong, Gwangjin-ku, Seoul 143-701, Korea, Republic of
[2] Device Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong, P.O. Box 107, Daejeon 305-600, Korea, Republic of
[3] Advanced Material Process of Information Technology, Sungkyunkwan University, Suwon 440-746, Korea, Republic of - Source
Applied surface science. 2009, Vol 255, Num 22, pp 9010-9014, 5 p ; ref : 34 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- FT-IR Film Hydrogen effect Micro Raman Shallow donors Zinc oxide (ZnO)
- Keyword (fr)
- Composé de métal de transition Composé minéral Couche mince Croissance film Donneur Hydrogène Magnétron Oxyde de zinc Pulvérisation cathodique H O Zn ZnO
- Keyword (en)
- Transition element compounds Inorganic compounds Thin films Film growth Donors Hydrogen Magnetrons Zinc oxide Cathode sputtering
- Keyword (es)
- Zinc óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21896394
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2009.06.083 
https://dx.doi.org/10.1016/j.apsusc.2009.06.083
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