Evaluation of the simultaneous use of Cp2VMe2 and CpTiCl2N(SiMe3)2 as precursors to ceramic thin films containing titanium and vanadium : Towards titanium-vanadium carbonitride
- Author
- VALADE, L1 ; DANJOY, C1 ; CHANSOU, B1 ; RIVIERE, E1 ; PELLEGATTA, J.-L1 ; CHOUKROUN, R1 ; CASSOUX, P1
[1] Equipe Précurseurs Moléculaires et Matériaux, Laboratoire de Chimie de Coordination, CNRS, 205 route de Narbonne, 31077 Toulouse, France - Issue title
- Thin film processing by chemical vapour deposition
- Author (monograph)
- LAINE, R. M (Editor)1
[1] University of Michigan, United States - Source
Applied organometallic chemistry. 1998, Vol 12, Num 3, pp 173-187 ; ref : 36 ref
- CODEN
- AOCHEX
- ISSN
- 0268-2605
- Scientific domain
- Organic chemistry
- Publisher
- Wiley, Chichester
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche mince Croissance cristalline en phase vapeur Céramique oxyde Céramique sans oxyde Etude expérimentale Méthode MOCVD Précurseur Titane Carbonitrure Vanadium Carbonitrure C N Ti V Titane(η5-cyclopentadiényl dichloro [bis(triméthylsilyl)amino]) Vanadium(η5-cyclopentadiényl diméthyl) Composé minéral Métal transition composé Titane Composé organique Vanadium Composé organique
- Keyword (en)
- Thin films Crystal growth from vapors Oxide ceramics Non oxide ceramics Experimental study MOCVD Precursor Titanium Carbonitrides Vanadium Carbonitrides Inorganic compounds Transition element compounds Titanium Organic compounds Vanadium Organic compounds
- Keyword (es)
- Cerámica óxido Cerámica sin óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2192811
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/(SICI)1099-0739(199803)12:3<173::AID-AOC690>3.0.CO;2-P 
https://dx.doi.org/10.1002/(SICI)1099-0739(199803)12:3<173::AID-AOC690>3.0.CO;2-P
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