Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties
- Author
- JUNQI XIE1 ; TOLLE, J1 2 ; D'COSTA, V. R3 ; WENG, C1 ; CHIZMESHYA, A. V. G1 ; MENENDEZ, J3 ; KOUVETAKIS, J1
[1] Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287-1604, United States
[2] Silicon Photonics Group, Inc., Gilbert, AZ 85233, United States
[3] Department of Physics, Arizona State University, Tempe, AZ 85287-1504, United States - Conference title
- Papers Selected from the 4th International SiGe Technology and Device Meeting (ISTDM 2008)
- Conference name
- International SiGe Technology and Device Meeting (ISTDM 2008) (ISTDM 2008) (4 ; Hsinchu 2008-05-11)
- Author (monograph)
- CALLEJA, E (Editor); CRISTOLOVEANU, S (Editor); ZASLAVSKY, A (Editor); KUK, Y (Editor)
- Source
Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, 8 p ; ref : 12 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Electrical and structural properties Ge1-ySny n- and p-doping
- Keyword (fr)
- Alliage semiconducteur Caractéristique optique Caractéristique électrique Concentration impureté Couche épaisse Densité porteur charge Densité trou Densité électron Diffusion superficielle Dopage Echelle nanométrique Ellipsométrie spectroscopique Etain Etude comparative Germanium In situ Microstructure Mobilité porteur charge Profil dopage Propriété transport Semiconducteur type n Semiconducteur type p Silicium Alliage GeSn
- Keyword (en)
- Semiconductor alloys Optical characteristic Electrical characteristic Impurity density Thick film Charge carrier density Hole density Electron density Surface diffusion Doping Nanometer scale Spectroscopic ellipsometry Tin Comparative study Germanium In situ Microstructure Charge carrier mobility Doping profile Transport properties n type semiconductor p type semiconductor Silicon
- Keyword (es)
- Característica óptica Característica eléctrica Concentración impureza Capa espesa Concentración portador carga Densidad huecos Densidad electrón Difusión superficial Doping Elipsometría espectroscópica Estaño Estudio comparativo Germanio In situ Microestructura Movilidad portador carga Perfil doping Propiedad transporte Semiconductor tipo n Semiconductor tipo p Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21938473
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2009.04.013 
https://dx.doi.org/10.1016/j.sse.2009.04.013
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