Influence of tertiarybutylphosphine (TBP) addition on the CVD growth of diamond
- Author
- FRANGIEH, G1 ; JOMARD, F1 ; PINAULT, M.-A1 ; BARJON, J1
[1] Groupe d'Etude de la Matière Condensée (GEMaC), Université Versailles St Quentin, CNRS, 1 place Aristide Briand, 92195 Meudon, France - Conference name
- Hasselt Diamond Workshop (Hasselt 2009-03-02)
- Source
Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 9, pp 1996-1999, 4 p ; ref : 12 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition phosphore Anisotropie Diamant Dopage Dépôt chimique phase vapeur Facettage Germination secondaire Hyperfréquence Microscopie électronique balayage Mécanisme croissance Polycristal Précurseur Semiconducteur type n Spectre SIMS Taux croissance Si
- Keyword (en)
- Phosphorus additions Anisotropy Diamonds Doping CVD Faceting Secondary nucleation Microwave radiation Scanning electron microscopy Growth mechanism Polycrystals Precursor n type semiconductor Secondary ion mass spectra Growth rate
- Keyword (es)
- Doping Facetage Germinación secundaria Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21979486
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200982225 
https://dx.doi.org/10.1002/pssa.200982225
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