Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor
- Autor
- MATSUZAKI, Kosuke1 ; NOMURA, Kenji2 ; YANAGI, Hiroshi1 ; KAMIYA, Toshio1 2 ; HIRANO, Masahiro2 3 ; HOSONO, Hideo1 2 3
[1] Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[2] ERATO-SORST, Japan Science and Technology Agency (JST), Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[3] Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan - Nombre de la conferencia
- Flexible and Transparent Electronics: From Materials to Devices. Symposium (Warsaw 2008-09-15)
- Fuente
Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 9, pp 2192-2197, 6 p ; ref : 17 ref
- ISSN
- 1862-6300
- Campo Científico
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Editor
- Wiley-VCH, Berlin
- País de la publicación
- Germany
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave (fr)
- Bande interdite Couche mince Couche épitaxique Densité état électron Mobilité Hall Monocristal Oxyde de cuivre Pression partielle Recuit Sous bande Spectre absorption Transistor couche mince Cu2O
- Palabra clave (in)
- Energy gap Thin film Epitaxial film Electronic density of states Hall mobility Single crystal Copper oxide Partial pressure Annealing Subband Absorption spectrum Thin film transistor
- Palabra clave (es)
- Banda prohibida Capa fina Capa epitáxica Movilidad Hall Monocristal Cobre óxido Presión parcial Recocido Subbanda Espectro de absorción Transistor capa delgada
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61L Other inorganic semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66L Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Disciplina
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 21979523
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Acceso al documento
Install on your browser
DOI
10.1002/pssa.200881795 
https://dx.doi.org/10.1002/pssa.200881795
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200881795\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:4:\"2192\";s:8:\"\u0000*\u0000epage\";s:4:\"2197\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MATSUZAKI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Kosuke\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:13:\"NOMURA, Kenji\";i:1;s:15:\"YANAGI, Hiroshi\";i:2;s:14:\"KAMIYA, Toshio\";i:3;s:16:\"HIRANO, Masahiro\";i:4;s:13:\"HOSONO, Hideo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200881795\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:4:\"2192\";s:8:\"\u0000*\u0000epage\";s:4:\"2197\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MATSUZAKI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Kosuke\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:13:\"NOMURA, Kenji\";i:1;s:15:\"YANAGI, Hiroshi\";i:2;s:14:\"KAMIYA, Toshio\";i:3;s:16:\"HIRANO, Masahiro\";i:4;s:13:\"HOSONO, Hideo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200881795\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Acceso mediante Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200881795\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:4:\"2192\";s:8:\"\u0000*\u0000epage\";s:4:\"2197\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MATSUZAKI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Kosuke\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:13:\"NOMURA, Kenji\";i:1;s:15:\"YANAGI, Hiroshi\";i:2;s:14:\"KAMIYA, Toshio\";i:3;s:16:\"HIRANO, Masahiro\";i:4;s:13:\"HOSONO, Hideo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200881795\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:4:\"2192\";s:8:\"\u0000*\u0000epage\";s:4:\"2197\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MATSUZAKI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Kosuke\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:13:\"NOMURA, Kenji\";i:1;s:15:\"YANAGI, Hiroshi\";i:2;s:14:\"KAMIYA, Toshio\";i:3;s:16:\"HIRANO, Masahiro\";i:4;s:13:\"HOSONO, Hideo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200881795\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:4:\"2192\";s:8:\"\u0000*\u0000epage\";s:4:\"2197\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MATSUZAKI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Kosuke\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:13:\"NOMURA, Kenji\";i:1;s:15:\"YANAGI, Hiroshi\";i:2;s:14:\"KAMIYA, Toshio\";i:3;s:16:\"HIRANO, Masahiro\";i:4;s:13:\"HOSONO, Hideo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:146:\"Effects of post-annealing on (110) applications and materials science Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
