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Plastic deformation magnetic assembly of out-of-plane structures using vapour phase hydrofluoric (HF) acid release

Author
ARGYRAKIS, P1 ; CHEUNG, R1
[1] School of Engineering, Scottish Microelectronics Centre, The University of Edinburgh, King's Buildings, West Mains Road, Edinburgh EH9 3JF, United Kingdom
Source

Microelectronic engineering. 2009, Vol 86, Num 11, pp 2176-2179, 4 p ; ref : 24 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Dry release method Hydrofluoric acid Plastic deformation magnetic assembly
Keyword (fr)
Composition chimique Couche oxyde Couche sacrificielle Déformation plastique Dépôt électrolytique Fabrication microélectronique Microscopie électronique balayage Microstructure Spectre photoélectron RX Structure plane Structure surface 0779
Keyword (en)
Chemical composition Oxide layer Sacrificial layer Plastic deformation Electrodeposition Microelectronic fabrication Scanning electron microscopy Microstructure X-ray photoelectron spectra Plane structure Surface structure
Keyword (es)
Composición química Capa óxido Capa sacrificial Deformación plástica Depósito electrolítico Fabricación microeléctrica Microscopía electrónica barrido Microestructura Estructura plana Estructura superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G79 Scanning probe microscopes, components and techniques

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21984011

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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