InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE
- Author
- NONOGAKI, Y1 ; IGUCHI, T1 ; FUCHI, S1 ; FUJIWARA, Y1 ; TAKEDA, Y1
[1] Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan - Conference title
- International Conference on Low Dimensional Structures and Devices
- Conference name
- International Conference on Low Dimensional Structures and Devices (2 ; Lisbon 1997-05-19)
- Author (monograph)
- HENINI, M (Editor)
- Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 118-121 ; ref : 11 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractérisation Composé binaire Composé organométallique Epaisseur Epitaxie phase vapeur Etude expérimentale Gouttelette Hétéroépitaxie Indium arséniure Indium phosphure Matériau semiconducteur Microscopie force atomique Mode opératoire Photoluminescence Point quantique Préparation As In In P InAs InP Composé minéral
- Keyword (en)
- Characterization Binary compounds Organometallic compounds Thickness VPE Experimental study Droplets Heteroepitaxy Indium arsenides Indium phosphides Semiconductor materials Atomic force microscopy Operating mode Photoluminescence Quantum dots Preparation Inorganic compounds
- Keyword (es)
- Caracterización Heteroepitaxia Método operatorio Preparación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2201679
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0921-5107(97)00242-0 
https://dx.doi.org/10.1016/S0921-5107(97)00242-0
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