Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide : III-V nitrides and silicon carbide
- Author
- CAPANO, M. A1 ; RYU, S1 ; MELLOCH, M. R1 ; COOPER, J. A1 ; BUSS, M. R2
[1] Purdue University, 1285 Electrical Engineering Bldg., West Lafayette, IN 47907-1285, United States
[2] Purdue University, Chemical Engineering Bldg., West Lafayette, IN 47907, United States - Source
Journal of electronic materials. 1998, Vol 27, Num 4, pp 370-376 ; ref : 12 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Activation Addition aluminium Addition bore Caractéristique courant tension Composé binaire Dopage Etude expérimentale Implantation ion Matériau semiconducteur Microscopie force atomique Microscopie optique Morphologie Polytypisme Recuit thermique Silicium carbure Surface Transition rugueuse C Si SiC:Al SiC:B Composé minéral
- Keyword (en)
- Activation Aluminium additions Boron additions IV characteristic Binary compounds Doping Experimental study Ion implantation Semiconductor materials Atomic force microscopy Optical microscopy Morphology Polytypism Thermal annealing Silicon carbides Surfaces Roughening transition Inorganic compounds
- Keyword (es)
- Activación Doping Recocido térmico Transición rugosa
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72W Doping and impurity implantation in other materials
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2205690
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-998-0417-4 
https://dx.doi.org/10.1007/s11664-998-0417-4
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