Study of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of molybdenum Schottky contacts on n-InP (10 0)
- Author
- JANARDHANAM, V1 ; ASHOK KUMAR, A1 ; RAJAGOPAL REDDY, V1 ; NARASIMHA REDDY, P1
[1] Department of Physics, Sri Venkateswara University, Tirupati 517502, India - Source
Journal of alloys and compounds. 2009, Vol 485, Num 1-2, pp 467-472, 6 p ; ref : 33 ref
- ISSN
- 0925-8388
- Scientific domain
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Barrier height C-V-T characteristics Gaussian distribution I-V-T characteristics Schottky contacts
- Keyword (fr)
- Barrière Schottky Caractéristique capacité tension Caractéristique courant tension Caractéristique électrique Composé III-V Contact métal semiconducteur Couche mince Diode Dépendance température Effet température Emission thermoionique Hauteur barrière Hétérogénéité Loi Gauss Loi normale Mesure tension électrique Molybdène Phosphure d'indium Propriété électrique Semiconducteur III-V 7330 InP Mo Te
- Keyword (en)
- Schottky barriers CV characteristic IV characteristic Electrical characteristic III-V compound Metal-semiconductor contacts Thin films Diodes Temperature dependence Temperature effects Thermionic emission Barrier height Inhomogeneity Gaussian distribution Normal distribution Voltage measurement Molybdenum Indium phosphide Electrical properties III-V semiconductors
- Keyword (es)
- Característica eléctrica Compuesto III-V Indio fosfuro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22060688
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jallcom.2009.05.141 
https://dx.doi.org/10.1016/j.jallcom.2009.05.141
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