Initial stage of SiO2 valence band formation
- Author
- HIROSE, K1 ; NOHIRA, H2 ; KOIKE, T2 ; AIZAKI, T2 ; HATTORI, T2
[1] Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229, Japan
[2] Musashi Institute of Technology, 1-28-1 Tamazutumi, Setagaya, Tokyo 158, Japan - Conference title
- Formation of semiconductor interfaces
- Conference name
- ICFSI-6 International Conference on the Formation of Semiconductor Interfaces (6 ; Cardiff 1997-06-23)
- Author (monograph)
- ELLIOTT, Martin (Editor)1 ; FLORES, Fernando (Editor)2 ; MATTHAI, Clarence (Editor)
[1] University of Wales Cardiff, United Kingdom
[2] Universidad AutÓnoma de Madrid, Spain - Source
Applied surface science. 1998, Vol 123-24, pp 542-545 ; ref : 22 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bande valence Couche ultramince Etude expérimentale Silicium oxyde Structure bande O Si SiO2 Composé minéral
- Keyword (en)
- Valence bands Ultrathin films Experimental study Silicon oxides Band structure Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2209473
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(97)00567-9 
https://dx.doi.org/10.1016/S0169-4332(97)00567-9
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