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Measurement of the surface tension of molten silicon by the use of ripplon

Author
KAWASAKI, N1 ; WATANABE, K1 ; NAGASAKA, Y1
[1] Department of Mechanical Engineering, Keio University, 3-14-1 Hiyoshi, Yokohama 223, Japan
Conference title
ECTP European Conference on Thermophysical Properties
Conference name
ECTP European Conference on Thermophysical Properties (14 ; Lyon 1996-09-16)
Source

High Temperatures. High Pressures (Print). 1998, Vol 30, Num 1, pp 91-96 ; ref : 19 ref

CODEN
HTHPAK
ISSN
0018-1544
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Pion, London
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Keyword (fr)
Etat fondu Etude expérimentale Ripplon Silicium Tension superficielle Viscosité
Keyword (en)
Melts Experimental study Ripplons Silicon Surface tension Viscosity
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F20 Diffusive momentum transport (including viscosity of liquids)

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H10 Fluid surfaces and fluid-fluid interfaces / 001B60H10C Surface energy (surface tension, interface tension, angle of contact, etc.)

Pacs
6620 Viscosity of liquids; diffusive momentum transport

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2209848

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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