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Effect of anion on the homogeneous precipitation of precursors and their thermal decomposition to zinc oxide

Author
SRIKANTH, Chamarthi K1 ; JEEVANANDAM, P1
[1] Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee-247667, India
Source

Journal of alloys and compounds. 2009, Vol 486, Num 1-2, pp 677-684, 8 p ; ref : 57 ref

ISSN
0925-8388
Scientific domain
Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Oxide materials Precipitation Semiconductors
Keyword (fr)
Composé du zinc Diffraction RX Décomposition thermique Microscopie électronique balayage Microscopie électronique transmission Oxyde de zinc Précipitation Précurseur Réseau(arrangement) Semiconducteur Spectre UV visible Thermogravimétrie Urée 8130M ZnO
Keyword (en)
Zinc compounds XRD Thermal decomposition Scanning electron microscopy Transmission electron microscopy Zinc oxide Precipitation Precursor Arrays Semiconductor materials Ultraviolet visible spectrum Thermogravimetry Urea
Keyword (es)
Descomposición térmica Zinc óxido Espectro UV visible
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A30 Phase diagrams and microstructures developed by solidification and solid-solid phase transformations / 001B80A30M Precipitation

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
22120857

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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