0.13 μm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications : THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING
- Author
- AVENIER, Grégory1 ; DIOP, Malick1 ; BORET, Samuel1 ; MONTUSCLAT, Sébastien1 ; MARGAIN, Alain1 ; PRUVOST, Sébastien1 ; NICOLSON, Sean T2 ; YAU, Kenneth H. K2 ; REVIL, Nathalie1 ; GLORIA, Daniel1 ; DUTARTRE, Didier1 ; VOINIGESCU, Sorin P2 ; CHEVALIER, Pascal1 ; CHANTRE, Alain1 ; TROILLARD, Germaine1 ; LOUBET, Nicolas1 ; BOUVIER, Julien1 ; DEPOYAN, Linda1 ; DERRIER, Nicolas1 ; BUCZKO, Michel1 ; LEYRIS, Cédric1
[1] STMicroelectronics, 38926 Crolles, France
[2] Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 3G4, Canada - Source
IEEE journal of solid-state circuits. 2009, Vol 44, Num 9, pp 2312-2321, 10 p ; ref : 20 ref
- CODEN
- IJSCBC
- ISSN
- 0018-9200
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- BiCMOS integrated circuits technology Silicon Germanium (SiGe) hetero junction bipolar transistor (HBT) integrated circuit fabrication millimeter wave technology
- Keyword (fr)
- Alliage semiconducteur Bobine inductance Circuit intégré BiCMOS Circuit intégré Condensateur Dispositif MIM Fiabilité Grille transistor Haute performance Hyperfréquence Ligne transmission Onde millimétrique Oxyde grille Technologie BiCMOS Transistor MOS Transistor bipolaire hétérojonction Transistor bipolaire Transistor jonction
- Keyword (en)
- Semiconductor alloys Inductor BiCMOS integrated circuits Integrated circuit Capacitor MIM devices Reliability Transistor gate High performance Microwave Transmission line Millimetric wave Gate oxide BiCMOS technology MOS transistor Heterojunction bipolar transistors Bipolar transistor Junction transistors
- Keyword (es)
- Bobina inductancia Circuito integrado Condensador Fiabilidad Rejilla transistor Alto rendimiento Hiperfrecuencia Línea transmisión Onda milimétrica Oxido rejilla Tecnología BiCMOS Transistor MOS Transistor bipolar
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F10 Magnetic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22157399
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JSSC.2009.2024102 
https://dx.doi.org/10.1109/JSSC.2009.2024102
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arXiv access
