Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
- Author
- AURET, F. D1 ; COELHO, S. M. M1 ; MYBURG, G1 ; JANSE VAN RENSBURG, P. J1 ; MEYER, W. E1
[1] Department of Physics, University of Pretoria, Pretoria, South Africa - Conference title
- Proceedings of the Third South African Conference on Photonic Materials: SACPM 2009: held in Mabula Game Lodge, South Africa 23-27 March 2009
- Conference name
- Conference on Photonic Materials (3 ; Bela Bela, Limpopo Province 2009-03-23)
- Author (monograph)
- VENTER, André (Editor)1 ; BOTHA, Reinhardt (Editor)1 ; AURET, Danie (Editor)2
University of Pretoria, Pretoria, South Africa (Organiser of meeting)
Nelson Mandela Metropolitan University, Port Elizabeth, South Africa (Organiser of meeting)
South African Institute of Physics, Condensed Matter Physics and Materials Specialist group, South Africa (Organiser of meeting)
[1] Nelson Mandela Metropolitan University, Port Elizabeth, South Africa
[2] University of Pretoria, Pretoria, South Africa - Source
Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4376-4378, 3 p ; ref : 11 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 61.72.J 61.72.uf 61.82.-d 66.30.Lw Annealing Ar plasma etching DLTS Defects Germanium
- Keyword (fr)
- Addition antimoine Amas interstitiel Amas lacune Bande interdite DLTS Dopage Défaut Etat défaut Germanium Gravure plasma Piégeage porteur charge Profil profondeur Recuit Semiconducteur Composé à ordre lacunaire
- Keyword (en)
- Antimony additions Interstitial cluster Vacancy cluster Energy gap DLTS Doping Defects Defect states Germanium Plasma etching Charge carrier trapping Depth profiles Annealing Semiconductor materials Ordered vacancy compound
- Keyword (es)
- Cúmulo intersticial Montón laguna Doping Grabado plasma Captura portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22280868
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2009.09.028 
https://dx.doi.org/10.1016/j.physb.2009.09.028
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