Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires
- Author
- FENG ZHOU1 ; MOORE, Arden L2 ; PETTES, Michael T2 ; YONG LEE2 ; JAE HUN SEOL2 ; QI LAURA YE3 ; RABENBERG, Lew1 2 ; LI SHI1 2
[1] Materials Science and Engineering Program, University of Texas at Austin, Austin, TX 78712, United States
[2] Department of Mechanical Engineering, University of Texas at Austin, Austin, TX 78712, United States
[3] Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, United States - Source
Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 2 ; 025406.1-025406.9 ; ref : 37 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Antimoniure d'indium Conductivité thermique réseau Conductivité électrique Diffraction RX Diffusion surface Effet Seebeck Facteur mérite Microscopie électronique balayage Microscopie électronique transmission Mobilité électron Méthode VLS Nanofil Pouvoir thermoélectrique Stoechiométrie Structure blende InSb
- Keyword (en)
- Indium antimonides Lattice thermal conductivity Electrical conductivity XRD Surface scattering Seebeck effect Figure of merit Scanning electron microscopy Transmission electron microscopy Electron mobility VLS growth Nanowires Thermoelectric power Stoichiometry Blende structure
- Keyword (es)
- Conductividad térmica red Factor mérito Método VLS Estructura blenda
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures / 001B70C63B Nanocrystalline materials
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22309709
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"025406.1-025406.9\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"FENG ZHOU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"MOORE, Arden L\";i:1;s:17:\"PETTES, Michael T\";i:2;s:8:\"YONG LEE\";i:3;s:12:\"JAE HUN SEOL\";i:4;s:11:\"QI LAURA YE\";i:5;s:14:\"RABENBERG, Lew\";i:6;s:6:\"LI SHI\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"025406.1-025406.9\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"FENG ZHOU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"MOORE, Arden L\";i:1;s:17:\"PETTES, Michael T\";i:2;s:8:\"YONG LEE\";i:3;s:12:\"JAE HUN SEOL\";i:4;s:11:\"QI LAURA YE\";i:5;s:14:\"RABENBERG, Lew\";i:6;s:6:\"LI SHI\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"025406.1-025406.9\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"FENG ZHOU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"MOORE, Arden L\";i:1;s:17:\"PETTES, Michael T\";i:2;s:8:\"YONG LEE\";i:3;s:12:\"JAE HUN SEOL\";i:4;s:11:\"QI LAURA YE\";i:5;s:14:\"RABENBERG, Lew\";i:6;s:6:\"LI SHI\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"025406.1-025406.9\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"FENG ZHOU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"MOORE, Arden L\";i:1;s:17:\"PETTES, Michael T\";i:2;s:8:\"YONG LEE\";i:3;s:12:\"JAE HUN SEOL\";i:4;s:11:\"QI LAURA YE\";i:5;s:14:\"RABENBERG, Lew\";i:6;s:6:\"LI SHI\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"025406.1-025406.9\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"FENG ZHOU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"MOORE, Arden L\";i:1;s:17:\"PETTES, Michael T\";i:2;s:8:\"YONG LEE\";i:3;s:12:\"JAE HUN SEOL\";i:4;s:11:\"QI LAURA YE\";i:5;s:14:\"RABENBERG, Lew\";i:6;s:6:\"LI SHI\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:94:\"Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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