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Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires

Author
FENG ZHOU1 ; MOORE, Arden L2 ; PETTES, Michael T2 ; YONG LEE2 ; JAE HUN SEOL2 ; QI LAURA YE3 ; RABENBERG, Lew1 2 ; LI SHI1 2
[1] Materials Science and Engineering Program, University of Texas at Austin, Austin, TX 78712, United States
[2] Department of Mechanical Engineering, University of Texas at Austin, Austin, TX 78712, United States
[3] Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, United States
Source

Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 2 ; 025406.1-025406.9 ; ref : 37 ref

CODEN
JPAPBE
ISSN
0022-3727
Scientific domain
Condensed state physics; Physics; Plasma physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Antimoniure d'indium Conductivité thermique réseau Conductivité électrique Diffraction RX Diffusion surface Effet Seebeck Facteur mérite Microscopie électronique balayage Microscopie électronique transmission Mobilité électron Méthode VLS Nanofil Pouvoir thermoélectrique Stoechiométrie Structure blende InSb
Keyword (en)
Indium antimonides Lattice thermal conductivity Electrical conductivity XRD Surface scattering Seebeck effect Figure of merit Scanning electron microscopy Transmission electron microscopy Electron mobility VLS growth Nanowires Thermoelectric power Stoichiometry Blende structure
Keyword (es)
Conductividad térmica red Factor mérito Método VLS Estructura blenda
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures / 001B70C63B Nanocrystalline materials

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
22309709

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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