Self-interstitials and related defects in irradiated silicon
- Author
- GORELKINSKII, Yu. V1 ; ABDULLIN, Kh. A1 ; MUKASHEV, B. N1 ; TURMAGAMBETOV, T. S1
[1] Institute of Physics and Technology, 050032 Almaty, Ibragimov St. 11, Kazakhstan - Conference title
- Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25
- Conference name
- International Conference on Defects in Semiconductors (ICDS) (ICDS) (25 ; Saint Petersburg 2009-07-20)
- Author (monograph)
- BAGRAEV, Nikolay T (Editor)1 ; EMTSEV, Vadim V (Editor)1 ; ESTREICHER, Stefan K (Editor)2
[1] Ioffe Institute, St. Petersburg, Russian Federation
[2] Texas Tech University, United States - Source
Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4579-4582, 4 p ; ref : 14 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- Russian
- Author keyword
- Injection annealing Irradiation Self-interstitial Silicon
- Keyword (fr)
- Addition aluminium Addition carbone DLTS Défaut complexe Effet rayonnement Etat défaut Impureté interstitielle Interstitiel Ion léger Irradiation ion Piégeage porteur charge Recuit thermique Silicium Si
- Keyword (en)
- Aluminium additions Carbon additions DLTS Complex defect Radiation effects Defect states Interstitial impurities Interstitials Light ions Ion irradiation Charge carrier trapping Thermal annealing Silicon
- Keyword (es)
- Defecto complejo Impureza intersticial Irradiación ión Captura portador carga Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A80 Physical radiation effects, radiation damage / 001B60A80J Ion radiation effects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22310284
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2009.08.115 
https://dx.doi.org/10.1016/j.physb.2009.08.115
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