Influence of defects on charge and energy transfer in layered crystals
- Author
- ABDULLAYEV, N. A1 ; KERIMOVA, T. G1
[1] Institute of Physics of Azerbaijan NAS, AZ-1143, Baku, H.Javid ave., 33, Azerbaijan - Conference title
- Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25
- Conference name
- International Conference on Defects in Semiconductors (ICDS) (ICDS) (25 ; Saint Petersburg 2009-07-20)
- Author (monograph)
- BAGRAEV, Nikolay T (Editor)1 ; EMTSEV, Vadim V (Editor)1 ; ESTREICHER, Stefan K (Editor)2
[1] Ioffe Institute, St. Petersburg, Russian Federation
[2] Texas Tech University, United States - Source
Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5215-5217, 3 p ; ref : 14 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- Russian
- Author keyword
- 61.72.Nn 72.20.-i 72.80.Ng Anisotropy Conductivity Layered crystals Stacking faults
- Keyword (fr)
- Anisotropie Conduction saut Cristal lamellaire Défaut empilement Défaut plan Transfert charge Transfert énergie Saut à distance variable
- Keyword (en)
- Anisotropy Hopping conduction Layered crystals Stacking faults Plane defects Charge transfer Energy transfer
- Keyword (es)
- Transferencia carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B10 Theory of electronic transport; scattering mechanisms / 001B70B10F Scattering by point defects, dislocations, surfaces, and other imperfections (including kondo effect)
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22310460
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2009.08.259 
https://dx.doi.org/10.1016/j.physb.2009.08.259
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