Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
- Author
- LEACH, J. H1 ; WU, M1 ; NI, X1 ; LI, X1 ; ÖZGÜR, Ü1 ; MORKOC, H1
[1] Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond VA, 23284, United States - Source
Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 1, pp 211-216, 6 p ; ref : 28 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Accommodation réseau Couche contrainte Discontinuité bande Etat électronique interface Hétérostructure Nitrure d'aluminium Nitrure d'indium Nitrure de gallium Paramètre cristallin Transconductance Transistor effet champ hétérojonction AlN GaN InN Paramètre de courbure
- Keyword (en)
- Mismatch lattice Strained layer Band offset Interface electron state Heterostructures Aluminium nitride Indium nitride Gallium nitride Lattice parameters Transconductance Heterojunction field effect transistor Bowing parameter
- Keyword (es)
- Acomodación red Capa forzada Discontinuidad banda Estado electrónico interfase Aluminio nitruro Indio nitruro Galio nitruro Parámetro cristalino Transconductancia Transistor efecto campo heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22346609
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200925362 
https://dx.doi.org/10.1002/pssa.200925362
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