Effect of chamber pressure and hydrogen on the formation of C3N4 films deposited on quartz substrates via MPCVD
- Author
- WU, Yu-Shiang1 ; WU, Sih-Wei1
[1] Department of Mechanical Engineering, China University of Science and Technology, Taipei 115, Taiwan, Province of China - Source
Journal of alloys and compounds. 2010, Vol 489, Num 1, pp 275-280, 6 p ; ref : 22 ref
- ISSN
- 0925-8388
- Scientific domain
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- AFM Microstructure Nitride materials Vapor deposition X-ray diffraction
- Keyword (fr)
- Diffraction RX Dureté Microscopie force atomique Microscopie électronique balayage Microstructure Morphologie surface Méthode PECVD Nanoindentation Nitrure de carbone Procédé dépôt Rugosité Réseau hexagonal Spectrométrie FTIR C3N4
- Keyword (en)
- XRD Hardness Atomic force microscopy Scanning electron microscopy Microstructure Surface morphology PECVD Nanoindentation Carbon nitrides Deposition process Roughness Hexagonal lattices Fourier-transformed infrared spectrometry
- Keyword (es)
- Nanoindentacion Procedimiento revestimiento Espectrometría FTIR
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22347366
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jallcom.2009.09.070 
https://dx.doi.org/10.1016/j.jallcom.2009.09.070
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