Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices
- Author
- KIM, Tae-Wook1 ; OH, Seung-Hwan1 ; LEE, Joonmyoung1 ; CHOI, Hyejung1 ; WANG, Gunuk1 ; PARK, Jubong1 ; KIM, Dong-Yu1 ; HWANG, Hyunsang1 ; LEE, Takhee1
[1] Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of - Source
Organic electronics (Print). 2010, Vol 11, Num 1, pp 109-114, 6 p ; ref : 29 ref
- ISSN
- 1566-1199
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Metal ion Organic memory device Polyfluorene
- Keyword (fr)
- Addition calcium Addition sodium Commutation Dispositif à mémoire Electronique organique Evaluation performance Facteur rétention Fluorène dérivé polymère Mémoire non volatile Seuil tension Temps réponse
- Keyword (en)
- Calcium addition Sodium addition Switching Memory devices Organic electronics Performance evaluation Retention factor Fluorene derivative polymer Non volatile memory Voltage threshold Response time
- Keyword (es)
- Adición calcio Adición sodio Conmutación Electrónica orgánica Evaluación prestación Factor retención Fluoreno derivado polímero Memoria no volátil Umbral tensión Tiempo respuesta
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03I Storage and reproduction of information / 001D03I02 Magnetic and optical mass memories
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22352461
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.orgel.2009.10.006 
https://dx.doi.org/10.1016/j.orgel.2009.10.006
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