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Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices

Author
KIM, Tae-Wook1 ; OH, Seung-Hwan1 ; LEE, Joonmyoung1 ; CHOI, Hyejung1 ; WANG, Gunuk1 ; PARK, Jubong1 ; KIM, Dong-Yu1 ; HWANG, Hyunsang1 ; LEE, Takhee1
[1] Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of
Source

Organic electronics (Print). 2010, Vol 11, Num 1, pp 109-114, 6 p ; ref : 29 ref

ISSN
1566-1199
Scientific domain
Electronics; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Metal ion Organic memory device Polyfluorene
Keyword (fr)
Addition calcium Addition sodium Commutation Dispositif à mémoire Electronique organique Evaluation performance Facteur rétention Fluorène dérivé polymère Mémoire non volatile Seuil tension Temps réponse
Keyword (en)
Calcium addition Sodium addition Switching Memory devices Organic electronics Performance evaluation Retention factor Fluorene derivative polymer Non volatile memory Voltage threshold Response time
Keyword (es)
Adición calcio Adición sodio Conmutación Electrónica orgánica Evaluación prestación Factor retención Fluoreno derivado polímero Memoria no volátil Umbral tensión Tiempo respuesta
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03I Storage and reproduction of information / 001D03I02 Magnetic and optical mass memories

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
22352461

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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