Ohmic contacts for compound semiconductors
- Author
- MURAKAMI, M1 ; KOIDE, Y1
[1] Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan - Source
Critical reviews in solid state and materials sciences. 1998, Vol 23, Num 1, pp 1-60 ; ref : 104 ref
- CODEN
- CCRSDA
- ISSN
- 1040-8436
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Taylor & Francis, Colchester
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Article synthèse Composé II-VI Composé III-V Composé binaire Contact ohmique Dépôt Fabrication microélectronique Gallium Arséniure Gallium Nitrure Recuit Zinc Séléniure As Ga Ga N GaAs GaN Se Zn ZnSe
- Keyword (en)
- Review II-VI compound III-V compound Binary compound Ohmic contact Deposition Microelectronic fabrication Gallium Arsenides Gallium Nitrides Annealing Zinc Selenides
- Keyword (es)
- Artículo síntesis Compuesto II-VI Compuesto III-V Compuesto binario Contacto óhmico Depósito Fabricación microeléctrica Galio Arseniuro Galio Nitruro Recocido Zinc Seleniuro
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2240101
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1080/10408439891324167 
https://dx.doi.org/10.1080/10408439891324167
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