RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking
- Author
- CADIX, L1 2 ; BERMOND, C2 ; FLECHET, B2 ; SILLON, N3 ; ANCEY, P1 ; FUCHS, C3 ; FARCY, A1 ; LEDUC, P3 ; DICIOCCIO, L3 ; ASSOUS, M3 ; ROUSSEAU, M1 3 ; LORUT, F1 ; CHAPELON, L. L1
[1] STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France
[2] Université de Savoie, IMEP-LAHC, 73376 Le Bourget du Lac, France
[3] CEA-Léti, 17 rue des Martyrs, 38054 Grenoble, France - Conference title
- MAM2009: A single-session Workshop devoted to Materials Research, Materials Properties and Interactions: Proceedings of the Eighteenth European Workshop on Materials for Advanced Metallization 2009
- Conference name
- European Workshop on Materials for Advanced Metallization (MAM2009) (MAM2009) (18 ; Grenoble 2009-03-08)
- Author (monograph)
- CHEVOLLEAU, Thierry (Editor)1 ; CHENEVIER, Bernard (Editor)2 ; LARTIGUE, Colette (Editor)3
CNRS/Grenoble INP, Laboratoire des Matériaux et du Génie Physique (LMGP), France (Organiser of meeting)
CEA-LETI, Grenoble, France (Organiser of meeting)
STMicroelectronics, Crolles, France (Organiser of meeting)
[1] LTM-CNRS, Grenoble, France
[2] Laboratoire des Matériaux et du Génie Physique, Grenoble, France
[3] Laboratoire des Matériaux et du Génie Physique, France - Source
Microelectronic engineering. 2010, Vol 87, Num 3, pp 491-495, 5 p ; ref : 8 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 3D integration Electrical properties Modelling TSV
- Keyword (fr)
- Caractéristique électrique Circuit intégré Cuivre Densité élevée Dépendance fréquence Empilement Modélisation Méthode analytique Programme SPICE Propriété électrique Silicium Structure 3 dimensions Trou interconnexion
- Keyword (en)
- Electrical characteristic Integrated circuit Copper High density Frequency dependence Stacking Modeling Analytical method SPICE Electrical properties Silicon Three dimensional structure Via hole
- Keyword (es)
- Característica eléctrica Circuito integrado Cobre Densidad elevada Apilamiento Modelización Método analítico Propiedad eléctrica Silicio Estructura 3 dimensiones Agujero interconexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22440163
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2009.08.026 
https://dx.doi.org/10.1016/j.mee.2009.08.026
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