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Molecular dynamics simulation of silicon oxidization

Author
GANSTER, Patrick1 ; TREGLIA, Guy1 ; LANCON, Frédéric2 ; POCHET, Pascal2
[1] Centre Interdisciplinaire de Nanoscience de Marseille, CNRS, Campus de Luminy, Case 913, 13288 Marseille, France
[2] Laboratoire L_Sim, CEA Grenoble/INAC/SP2M, 17 avenue des Martyrs, 38054 Grenoble, France
Conference title
Silicon and Germanium Issues for Future CMOS Devices
Conference name
2009 E-MRS 2009 Spring Meeting Symposium I (Strasbourg 2009-06-08)
Author (monograph)
PELAZ, Lourdes (Editor); MIRABELLA, Salvo (Editor)1 ; LARSEN, Arne Nylandsted (Editor)
European Material Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
Source

Thin solid films. 2010, Vol 518, Num 9, pp 2422-2426, 5 p ; ref : 17 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Molecular dynamics Silicon oxidization
Keyword (fr)
Couche oxyde Dynamique moléculaire Etude théorique Implantation ion Interface Méthode dynamique moléculaire Oxydation Oxyde de silicium Silicium 6172T Si SiO2
Keyword (en)
Oxide layer Molecular dynamics Theoretical study Ion implantation Interfaces Molecular dynamics method Oxidation Silicon oxides Silicon
Keyword (es)
Capa óxido Dinámica molecular
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72T Doping and impurity implantation in germanium and silicon

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
22520789

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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