Molecular dynamics simulation of silicon oxidization
- Author
- GANSTER, Patrick1 ; TREGLIA, Guy1 ; LANCON, Frédéric2 ; POCHET, Pascal2
[1] Centre Interdisciplinaire de Nanoscience de Marseille, CNRS, Campus de Luminy, Case 913, 13288 Marseille, France
[2] Laboratoire L_Sim, CEA Grenoble/INAC/SP2M, 17 avenue des Martyrs, 38054 Grenoble, France - Conference title
- Silicon and Germanium Issues for Future CMOS Devices
- Conference name
- 2009 E-MRS 2009 Spring Meeting Symposium I (Strasbourg 2009-06-08)
- Author (monograph)
- PELAZ, Lourdes (Editor); MIRABELLA, Salvo (Editor)1 ; LARSEN, Arne Nylandsted (Editor)
European Material Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy - Source
Thin solid films. 2010, Vol 518, Num 9, pp 2422-2426, 5 p ; ref : 17 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Molecular dynamics Silicon oxidization
- Keyword (fr)
- Couche oxyde Dynamique moléculaire Etude théorique Implantation ion Interface Méthode dynamique moléculaire Oxydation Oxyde de silicium Silicium 6172T Si SiO2
- Keyword (en)
- Oxide layer Molecular dynamics Theoretical study Ion implantation Interfaces Molecular dynamics method Oxidation Silicon oxides Silicon
- Keyword (es)
- Capa óxido Dinámica molecular
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72T Doping and impurity implantation in germanium and silicon
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22520789
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2009.09.144 
https://dx.doi.org/10.1016/j.tsf.2009.09.144
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