Influence of O contamination and Au cluster properties on the structural features of Si nanowires
- Author
- PECORA, Emanuele F1 2 ; IRRERA, Alessia1 ; PRIOLO, Francesco1 2
[1] MATIS, CNR-INFM, Via S. Sofia 64, 95123 Catania, Italy
[2] Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy - Conference title
- Silicon and Germanium Issues for Future CMOS Devices
- Conference name
- 2009 E-MRS 2009 Spring Meeting Symposium I (Strasbourg 2009-06-08)
- Author (monograph)
- PELAZ, Lourdes (Editor); MIRABELLA, Salvo (Editor)1 ; LARSEN, Arne Nylandsted (Editor)
European Material Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy - Source
Thin solid films. 2010, Vol 518, Num 9, pp 2562-2564, 3 p ; ref : 15 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Nanowire Scanning electron microscopy Silicon Vapour-liquid-solid
- Keyword (fr)
- Contamination superficielle Couche épitaxique Diffusion(transport) Epitaxie Evaporation faisceau électronique Gouttelette Microscopie électronique balayage Mécanisme croissance Méthode VLS Nanofil Nanomatériau Nanostructure Nanoélectronique Or Oxyde de silicium Recuit thermique Relation ordre Silicium Taux croissance Transformation ordre désordre 8107 8107V 8115K 8535 Si SiO2
- Keyword (en)
- Surface contamination Epitaxial layers Diffusion Epitaxy Electron beam evaporation Droplets Scanning electron microscopy Growth mechanism VLS growth Nanowires Nanostructured materials Nanostructures Nanoelectronics Gold Silicon oxides Thermal annealing Ordering Silicon Growth rate Order-disorder transformations
- Keyword (es)
- Mecanismo crecimiento Método VLS Recocido térmico Relación orden
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22520820
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2009.08.019 
https://dx.doi.org/10.1016/j.tsf.2009.08.019
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