Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
- Author
- MOERS, J1 ; GERHARZ, J1 ; RINKE, G1 ; MUSSLER, G1 ; TRELLENKAMP, St1 ; GRÜTZMACHER, D1
[1] Institute of Bio- and Nanosystems IBN-1, Forschungszentrum Jülich, D-52425 Jülich, and Jülich Aachen Research Alliance (JARA), Germany - Conference title
- Silicon and Germanium Issues for Future CMOS Devices
- Conference name
- 2009 E-MRS 2009 Spring Meeting Symposium I (Strasbourg 2009-06-08)
- Author (monograph)
- PELAZ, Lourdes (Editor); MIRABELLA, Salvo (Editor)1 ; LARSEN, Arne Nylandsted (Editor)
European Material Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy - Source
Thin solid films. 2010, Vol 518, Num 9, pp 2565-2568, 4 p ; ref : 7 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- E-beam-lithography MOSFET Overlay Strained silicon
- Keyword (fr)
- Autoassemblage Couche contrainte Couche épitaxique Diélectrique permittivité élevée Electrode commande Epitaxie Germanium Lithographie Loi échelle Mobilité porteur charge Mécanisme croissance Porte logique Réaction dirigée Silicium Transistor MOSFET 6855A 8530T Si
- Keyword (en)
- Self-assembly Strained layer Epitaxial layers High k dielectric Gates Epitaxy Germanium Lithography Scaling laws Carrier mobility Growth mechanism Logic gates Template reaction Silicon MOSFET
- Keyword (es)
- Capa forzada Dieléctrico alta constante dieléctrica Mecanismo crecimiento Reacción dirigida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22520821
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2009.09.155 
https://dx.doi.org/10.1016/j.tsf.2009.09.155
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