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1.3 μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs

Author
MONTES, M1 ; GUZMAN, A1 ; TRAMPERT, A2 ; HIERRO, A1
[1] ISOM and Departamento de Ingeniería Electr6nica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
[2] Paul-Drude-Institut für Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Source

Solid-state electronics. 2010, Vol 54, Num 4, pp 492-496, 5 p ; ref : 15 ref

ISSN
0038-1101
Scientific domain
Electronics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Dilute nitrides GaInNAs LED Resonant cavity
Keyword (fr)
Alliage (action) Caractéristique courant tension Caractéristique optique Caractéristique électrique Contact ohmique Diode électroluminescente Défaut ponctuel Electroluminescence Endommagement Epitaxie jet moléculaire Evaluation performance Fabrication microélectronique Idéalité Microcavité Onde stationnaire Puits quantique Rugosité Réflexion Bragg répartie Résonateur cavité Seuil tension Shunt Température ambiante 8107S 8115H Dispositif optoélectronique
Keyword (en)
Alloying Voltage current curve Optical characteristic Electrical characteristic Ohmic contact Light emitting diode Point defect Electroluminescence Damaging Molecular beam epitaxy Performance evaluation Microelectronic fabrication Ideality Microcavity Standing wave Quantum well Roughness Distributed Bragg reflection Cavity resonator Voltage threshold Shunt Room temperature Optoelectronic device
Keyword (es)
Aleación (acción) Característica corriente tensión Característica óptica Característica eléctrica Contacto óhmico Diodo electroluminescente Defecto puntual Electroluminiscencia Deterioración Evaluación prestación Fabricación microeléctrica Idealidad Microcavidad Onda estacionaria Pozo cuántico Rugosidad Reflexión Bragg repartida Resonador cavidad Umbral tensión Shunt Temperatura ambiente Dispositivo optoelectrónico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A1 Oscillators, resonators, synthetizers

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
22524421

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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