Influence of charge trapping on oxide scaling down
- Author
- GHIDINI, G1 ; ALESSANDRI, M1 ; CLEMENTI, C1 ; PELLIZZER, F1
[1] Non Volatile Memory Process Development, Central R&D, SGS-THOMSON Microelectronics, via Olivetti 2, 20041 Agrate Brianza, Italy - Conference title
- Dielectrics in microelectronics
- Conference name
- 1996 Workshop Dielectrics in Microelectronics (Venice 1996-11-06)
- Author (monograph)
- PACCAGNELLA, Alessandro (Editor)1 ; ZANONI, Enrico (Editor)1
University of Padova, Italy (Funder/Sponsor)
ST Microelectronics, Italy (Funder/Sponsor)
Associazione Elettrotecnica ed Elettronica Italiana (AEI), Italy (Funder/Sponsor)
[1] Dipartimento di Elettronica e Informatica, University of Padova, Italy - Source
Microelectronics and reliability. 1998, Vol 38, Num 2, pp 217-220 ; ref : 7 ref
- CODEN
- MCRLAS
- ISSN
- 0026-2714
- Scientific domain
- Electronics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Circuit intégré Composé binaire Effet dimensionnel Epaisseur couche Fiabilité Piégeage porteur charge Silicium Oxyde O Si SiO2
- Keyword (en)
- Integrated circuit Binary compound Size effect Layer thickness Reliability Charge carrier trapping Silicon Oxides
- Keyword (es)
- Circuito integrado Compuesto binario Efecto dimensional Espesor capa Fiabilidad Captura portador carga Silicio Óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2253377
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0026-2714(97)00215-1 
https://dx.doi.org/10.1016/S0026-2714(97)00215-1
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