Electrically Controlled Giant Piezoresistance in Silicon Nanowires
- Author
- NEUZIL, Pavel1 ; CHEE CHUNG WONG1 2 ; REBOUD, Julien1
[1] Institute of Microelectronics, A*STAR, Singapore
[2] Division of Bioengineering, Nanyang Technological University, Singapore - Source
Nano letters (Print). 2010, Vol 10, Num 4, pp 1248-1252, 5 p ; ref : 21 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Capteur Contrainte mécanique Densité porteur charge Distribution contrainte Effet champ électrique Effet contrainte Facteur jauge Nanofil Nanomatériau Piézorésistance Silicium Transistor effet champ 0707D 8107B 8107V 8530T Si
- Keyword (en)
- Sensors Mechanical stress Carrier density Stress distribution Electric field effects Stress effects Gauge factor Nanowires Nanostructured materials Piezoresistance Silicon Field effect transistors
- Keyword (es)
- Tensión mecánica Factor galga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Metrology Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22636159
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl9037856 
https://dx.doi.org/10.1021/nl9037856
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