Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- Auteur
- SUNG HYUN JO1 ; TING CHANG1 ; EBONG, Idongesit1 ; BHADVIYA, Bhavitavya B1 ; MAZUMDER, Pinaki1 ; WEI LU1
[1] Department of Electrical Engineering and Computer Science, University of Michigan, Michigan 48109, United States - Source
Nano letters (Print). 2010, Vol 10, Num 4, pp 1297-1301, 5 p ; ref : 28 ref
- Editeur
- American Chemical Society, Washington, DC
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Densité élevée Echelle nanométrique Nanostructure Neurone Plasticité Semiconducteur Silicium 6225 6865 Si
- Mot clé (en)
- High density Nanometer scale Nanostructures Nerve cells Plasticity Semiconductor materials Silicon
- Mot clé (es)
- Densidad elevada
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60B Propriétés mécaniques et acoustiques de l'état condensé / 001B60B25 Propriétés mécaniques des nanostructures et des nanomatériaux
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) / 001B60H65 Structures de basse dimensionnalité (superréseaux, puits quantiques, multicouches): structure et propriétés non électroniques
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 22636168
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl904092h 
https://dx.doi.org/10.1021/nl904092h
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