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Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Autor
SUNG HYUN JO1 ; TING CHANG1 ; EBONG, Idongesit1 ; BHADVIYA, Bhavitavya B1 ; MAZUMDER, Pinaki1 ; WEI LU1
[1] Department of Electrical Engineering and Computer Science, University of Michigan, Michigan 48109, United States
Fuente

Nano letters (Print). 2010, Vol 10, Num 4, pp 1297-1301, 5 p ; ref : 28 ref

ISSN
1530-6984
Campo Científico
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Editor
American Chemical Society, Washington, DC
País de la publicación
United States
Tipo de documento
Article
Idioma
English
Palabra clave (fr)
Densité élevée Echelle nanométrique Nanostructure Neurone Plasticité Semiconducteur Silicium 6225 6865 Si
Palabra clave (in)
High density Nanometer scale Nanostructures Nerve cells Plasticity Semiconductor materials Silicon
Palabra clave (es)
Densidad elevada
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B25 Mechanical properties of nanoscale materials

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Disciplina
Physics of condensed state : structure, mechanical and thermal properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
22636168

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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