Surface treatments toward obtaining clean GaN(0 0 01 ) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum
- Author
- HATTORI, Azusa N1 ; ENDO, Katsuyoshi1 ; HATTORI, Ken2 ; DAIMON, Hiroshi2
[1] Research Centerfor Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan
[2] Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan - Source
Applied surface science. 2010, Vol 256, Num 14, pp 4745-4756, 12 p ; ref : 95 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 68.37.Ef 68.43.Vx 68.47.Fg 68.55.ag GaN Low-energy electron diffraction Reflection high-energy electron diffraction Scanning tunneling microscopy Surface preparation Surface structure
- Keyword (fr)
- Composé minéral Croissance film Dépôt chimique phase vapeur Epitaxie phase vapeur LEED Microscopie tunnel balayage Nitrure de gallium Préparation surface RHEED Semiconducteur Structure surface Traitement surface Ultravide Ga N GaN
- Keyword (en)
- Inorganic compounds Film growth CVD VPE LEED Scanning tunneling microscopy Gallium nitride Surface preparation RHEED Semiconductor materials Surface structure Surface treatments Ultrahigh vacuum
- Keyword (es)
- Galio nitruro Preparación superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22685176
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2010.03.001 
https://dx.doi.org/10.1016/j.apsusc.2010.03.001
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