The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process
- Author
- TENG, Ying-Yang1 ; CHEN, Jyh-Chen1 ; LU, Chung-Wei2 ; CHEN, Chi-Yung3
[1] National Central University, Taiwan, Province of China
[2] Jen-Teh College, Taiwan, Province of China
[3] Sino-American Silicon Products Inc., Taiwan, Province of China - Conference name
- American Conference on Crystal Growth and Epitaxy (17 ; Lake Geneva, Wisconsin 2009-08-09)
- Source
Journal of crystal growth. 2010, Vol 312, Num 8, pp 1282-1290, 9 p ; ref : 14 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Computer simulation A1. Heat transfer A1. Impurities A1. Mass transfer B3. Solar cells
- Keyword (fr)
- Carbone Cellule solaire Champ écoulement Condition opératoire Croissance cristalline en phase fondue Distribution concentration Interface croissance Mécanisme croissance Polycristal Silicium Simulation numérique Simulation ordinateur Solidification dirigée Transfert chaleur Transfert masse 6475 8110A 8110F 8130F Si
- Keyword (en)
- Carbon Solar cells Flow pattern Operating conditions Crystal growth from melts Concentration distribution Growth interface Growth mechanism Polycrystals Silicon Digital simulation Computerized simulation Directional solidification Heat transfer Mass transfer
- Keyword (es)
- Condición operatoria Distribución concentración Interfase crecimiento Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D75 Solubility, segregation, and mixing; phase separation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A30 Phase diagrams and microstructures developed by solidification and solid-solid phase transformations / 001B80A30F Solidification
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22757983
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2009.11.020 
https://dx.doi.org/10.1016/j.jcrysgro.2009.11.020
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