Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films
- Author
- WANG, J. P1 ; LU, Y. H2 ; SHEN, Y. G3
[1] Science School, Beijing University of Civil Engineering and Architecture, Beijing 100044, China
[2] National Center for Materials Service Safety, University of Science and Technology Beijing, Beijing 100083, China
[3] Department of Manufacturing Engineering & Engineering Management (MEEM), City University of Hong Kong, Kowloon, Hong-Kong - Source
Applied surface science. 2010, Vol 256, Num 6, pp 1955-1960, 6 p ; ref : 21 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Amorphous Hardness Microstructure N content SiCxNy
- Keyword (fr)
- Azote Couche mince Dureté Etat amorphe Magnétron Microstructure Nanostructure N
- Keyword (en)
- Nitrogen Thin films Hardness Amorphous state Magnetrons Microstructure Nanostructures
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22772646
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2009.10.044 
https://dx.doi.org/10.1016/j.apsusc.2009.10.044
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