The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction
- Author
- MENG, Zhao1 ; YU, Libo1 ; LI, Xiao1 ; LIU, Qibin1 ; DUAN, Huiqiang2 ; YU, Chenhui2 ; CHEN, Changqing2
[1] South-West Institute of Technical Physics, Chengdu, 610041, China
[2] Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China - Conference title
- Photonics and Optoelectronics Meetings (POEM) 2009 (solar cells, solid state lighting, and information display technologies)
- Conference name
- Photonics and Optoelectronics Meetings (Wuhan 2009)
- Author (monograph)
- Grätzel, Michael (Editor)
SPIE, United States (Organiser of meeting)
Wuhan dian guang guo jia shi yan shi, China (Organiser of meeting)
Zhongguo guang xue xue hui, China (Organiser of meeting)
China, Jiao yu bu, China (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7518 ; 1Vol ; 751813.1-751813.7 ; ref : 14 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-7907-5 0-8194-7907-1
- Scientific domain
- Electronics; Energy; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bande absorption Bande interdite Capteur mesure Caractéristique courant tension Caractéristique optique Caractéristique électrique Couche superficielle Couche épitaxique Courant intense Cristal lamellaire Diffraction RX Défaut Désadaptation Détecteur UV Fabrication industrielle Fabrication microélectronique Haute performance Haute tension Limite absorption Méthode MOCVD Propriété optique Propriété électrique Uniformité 0707D Photodétecteur
- Keyword (en)
- Absorption band Energy gap Measurement sensor Voltage current curve Optical characteristic Electrical characteristic Surface layer Epitaxial film High strength current Layered crystals X ray diffraction Defect Mismatching Ultraviolet detector Manufacturing Microelectronic fabrication High performance High voltage Absorption edge MOCVD Optical properties Electrical properties Uniformity Photodetector
- Keyword (es)
- Banda absorción Banda prohibida Captador medida Característica corriente tensión Característica óptica Característica eléctrica Capa superficial Capa epitáxica Corriente intensa Difracción RX Defecto Desadaptación Detector UV Fabricación microeléctrica Alto rendimiento Alta tensión Límite absorción Propiedad óptica Propiedad eléctrica Uniformidad Fotodetector
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22803429
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1117/12.840465 
https://dx.doi.org/10.1117/12.840465
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.840465\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:4:\"7518\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"751813.1-751813.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"MENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Zhao\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"YU, Libo\";i:1;s:8:\"LI, Xiao\";i:2;s:10:\"LIU, Qibin\";i:3;s:14:\"DUAN, Huiqiang\";i:4;s:11:\"YU, Chenhui\";i:5;s:15:\"CHEN, Changqing\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:31:\"978-0-8194-7907-5 0-8194-7907-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:124:\"Photonics and Optoelectronics Meetings (POEM) 2009 (solar cells, solid state lighting, and information display technologies)\";s:8:\"\u0000*\u0000title\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.840465\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:4:\"7518\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"751813.1-751813.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"MENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Zhao\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"YU, Libo\";i:1;s:8:\"LI, Xiao\";i:2;s:10:\"LIU, Qibin\";i:3;s:14:\"DUAN, Huiqiang\";i:4;s:11:\"YU, Chenhui\";i:5;s:15:\"CHEN, Changqing\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:31:\"978-0-8194-7907-5 0-8194-7907-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:124:\"Photonics and Optoelectronics Meetings (POEM) 2009 (solar cells, solid state lighting, and information display technologies)\";s:8:\"\u0000*\u0000title\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.840465\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.840465\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:4:\"7518\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"751813.1-751813.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"MENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Zhao\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"YU, Libo\";i:1;s:8:\"LI, Xiao\";i:2;s:10:\"LIU, Qibin\";i:3;s:14:\"DUAN, Huiqiang\";i:4;s:11:\"YU, Chenhui\";i:5;s:15:\"CHEN, Changqing\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:31:\"978-0-8194-7907-5 0-8194-7907-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:124:\"Photonics and Optoelectronics Meetings (POEM) 2009 (solar cells, solid state lighting, and information display technologies)\";s:8:\"\u0000*\u0000title\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.840465\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:4:\"7518\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"751813.1-751813.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"MENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Zhao\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"YU, Libo\";i:1;s:8:\"LI, Xiao\";i:2;s:10:\"LIU, Qibin\";i:3;s:14:\"DUAN, Huiqiang\";i:4;s:11:\"YU, Chenhui\";i:5;s:15:\"CHEN, Changqing\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:31:\"978-0-8194-7907-5 0-8194-7907-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:124:\"Photonics and Optoelectronics Meetings (POEM) 2009 (solar cells, solid state lighting, and information display technologies)\";s:8:\"\u0000*\u0000title\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.840465\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:4:\"7518\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"751813.1-751813.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"MENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Zhao\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"YU, Libo\";i:1;s:8:\"LI, Xiao\";i:2;s:10:\"LIU, Qibin\";i:3;s:14:\"DUAN, Huiqiang\";i:4;s:11:\"YU, Chenhui\";i:5;s:15:\"CHEN, Changqing\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:31:\"978-0-8194-7907-5 0-8194-7907-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:124:\"Photonics and Optoelectronics Meetings (POEM) 2009 (solar cells, solid state lighting, and information display technologies)\";s:8:\"\u0000*\u0000title\";s:82:\"The Evaluation and Measurement of AlGaN epitaxial layer with high Al mole fraction\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
