Ultrashort pulse laser ablation of silicon : an MD simulation study
- Author
- HERRMANN, R. F. W1 ; GERLACH, J2 ; CAMPBELL, E. E. B1
[1] Max-Born Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Postfach 1107, 12474 Berlin-Adlershof, Germany
[2] GMD-FIRST, Rudower Chaussee 5, 12489 Berlin-Adlershof, Germany - Source
Applied physics. A, Materials science & processing (Print). 1998, Vol 66, Num 1, pp 35-42 ; ref : 39 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Calcul dynamique moléculaire Etude théorique Interaction rayonnement matière Laser pulsé Méthode ablation laser Silicium Si
- Keyword (en)
- Molecular dynamics calculations Theoretical study Radiation matter interactions Pulsed lasers Laser ablation technique Silicon
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I20 Impact phenomena (including electron spectra and sputtering) / 001B70I20D Laser-beam impact phenomena
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2281242
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s003390050634 
https://dx.doi.org/10.1007/s003390050634
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