Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2-Si films
- Author
- HE, Bo-Ching1 ; WEN, Hua-Chiang2 ; LIN, Meng-Hung1 ; LAI, Yi-Shao3 ; WU, Wen-Fa4 ; CHOU, Chang-Pin1
[1] Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Province of China
[2] Department of Mechanical Engineering, Chin-Yi University of Technology, Taichung 411, Taiwan, Province of China
[3] Central Labs, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, 811 Nantze, Kaohsiung, Taiwan, Province of China
[4] National Nano Device Laboratories, Hsinchu 300, Taiwan, Province of China - Source
Microelectronics and reliability. 2010, Vol 50, Num 6, pp 851-856, 6 p ; ref : 34 ref
- CODEN
- MCRLAS
- ISSN
- 0026-2714
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage Ge Si Dislocation interfaciale Dépôt chimique phase vapeur Dépôt sous vide Essai dureté Fabrication microélectronique Fiabilité Microscopie force atomique Microscopie électronique transmission Microstructure Multicouche Propriété mécanique Recuit thermique rapide Recuit thermique Relaxation Rugosité Température recuit Traitement thermique Ultra haute tension Vide poussé Alliage semiconducteur
- Keyword (en)
- Ge-Si alloys Misfit dislocation Chemical vapor deposition Vacuum deposition Hardness test Microelectronic fabrication Reliability Atomic force microscopy Transmission electron microscopy Microstructure Multiple layer Mechanical properties Rapid thermal annealing Thermal annealing Relaxation Roughness Annealing temperature Heat treatment Ultrahigh voltage High vacuum Semiconductor alloys
- Keyword (es)
- Dislocación interfacial Depósito químico fase vapor Depósito bajo vacío Ensayo dureza Fabricación microeléctrica Fiabilidad Microscopía fuerza atómica Microscopía electrónica transmisión Microestructura Capa múltiple Propiedad mecánica Recocido térmico rápido Recocido térmico Relajación Rugosidad Temperatura recocido Tratamiento térmico Ultraalto voltaje
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22834308
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.microrel.2010.02.013 
https://dx.doi.org/10.1016/j.microrel.2010.02.013
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