Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films
- Author
- DAOUAHI, M1 ; ZELLAMA, K2 ; ELKAÏM, P3 ; DIXMIER, J3 ; BOUCHRIHA, H4
[1] Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Bizerte, 7000 Zarzouna, Bizerte, Tunisia
[2] Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d'Amiens, 33 rue Saint-Leu, 80039 Amiens, France
[3] Laboratoire de Physique des Solides C.N.R.S., 1 place Aristide Briand, 92000 Bellevue, France
[4] Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 1060 Tunis, Tunisia - Conference name
- Journée Maghrébines sur les Sciences des Matériaux (Hammamet 1996-11-08)
- Source
EPJ. Applied physics (Print). 1998, Vol 1, Num 3, pp 301-304 ; ref : 7 ref
- Publisher
- EDP Sciences, Les Ulis
/
Springer, Berlin
- Publication country
- France
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Couche mince Densité défaut Etude expérimentale Magnétron Matériau amorphe hydrogéné Niveau profond Pulvérisation cathodique Recuit Relation fabrication propriété Silicium Spectre IR Spectre absorption a-Si:H
- Keyword (en)
- Thin films Defect density Experimental study Magnetrons Amorphous hydrogenated material Deep level Cathode sputtering Annealing Fabrication property relation Silicon Infrared spectra Absorption spectra
- Keyword (es)
- Densidad defecto Nivel profundo Relación fabricación propiedad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05G Amorphous semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2284806
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1051/epjap:1998150 
https://dx.doi.org/10.1051/epjap:1998150
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:21:\"10.1051\/epjap:1998150\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:9:\"\u0000*\u0000jtitle\";s:28:\"EPJ. Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:24:\"EPJ, Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:1:\"1\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1286-0042\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DAOUAHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"ZELLAMA, K\";i:1;s:10:\"ELKA\u00cfM, P\";i:2;s:10:\"DIXMIER, J\";i:3;s:12:\"BOUCHRIHA, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP Sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:21:\"10.1051\/epjap:1998150\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:9:\"\u0000*\u0000jtitle\";s:28:\"EPJ. Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:24:\"EPJ, Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:1:\"1\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1286-0042\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DAOUAHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"ZELLAMA, K\";i:1;s:10:\"ELKA\u00cfM, P\";i:2;s:10:\"DIXMIER, J\";i:3;s:12:\"BOUCHRIHA, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP Sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:21:\"10.1051\/epjap:1998150\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:21:\"10.1051\/epjap:1998150\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:9:\"\u0000*\u0000jtitle\";s:28:\"EPJ. Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:24:\"EPJ, Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:1:\"1\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1286-0042\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DAOUAHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"ZELLAMA, K\";i:1;s:10:\"ELKA\u00cfM, P\";i:2;s:10:\"DIXMIER, J\";i:3;s:12:\"BOUCHRIHA, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP Sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:21:\"10.1051\/epjap:1998150\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:9:\"\u0000*\u0000jtitle\";s:28:\"EPJ. Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:24:\"EPJ, Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:1:\"1\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1286-0042\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DAOUAHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"ZELLAMA, K\";i:1;s:10:\"ELKA\u00cfM, P\";i:2;s:10:\"DIXMIER, J\";i:3;s:12:\"BOUCHRIHA, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP Sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:21:\"10.1051\/epjap:1998150\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:9:\"\u0000*\u0000jtitle\";s:28:\"EPJ. Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:24:\"EPJ, Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:1:\"1\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1286-0042\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DAOUAHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"ZELLAMA, K\";i:1;s:10:\"ELKA\u00cfM, P\";i:2;s:10:\"DIXMIER, J\";i:3;s:12:\"BOUCHRIHA, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP Sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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