The bases of luminescent diagnostic of dislocation structure of SiC crystals
- Author
- GORBAN, I. S1 ; MISHINOVA, G. N1
[1] Taras Shevchenko University, 64, Volodimirska st., Kiev, 252017, Ukraine - Conference title
- Optical diagnosis of materials and devices for opto-, micro-, and quantum electronics 1997 (Kiev, 13-15 May 1997)
- Conference name
- International conference on optical diagnosis of materials and devices for opto-, micro-, and quantum electronics (Kiev 1997-05-13)
- Author (monograph)
- Svechnikov, Sergei V (Editor); Valakh, Mikhail Ya (Editor)
International Society for Optical Engineering, Bellingham WA, United States (Organiser of meeting) - Source
SPIE proceedings series. 1998, pp 187-196 ; ref : 6 ref
- ISBN
- 0-8194-2808-6
- Scientific domain
- Electronics; Metrology and instrumentation; Optics; Physics; Telecommunications
- Publisher
- SPIE, Bellingham WA
- Publication country
- International
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Défaut empilement Luminescence Silicium Carbure Structure dislocation
- Keyword (en)
- Stacking faults Luminescence Silicon Carbides Dislocation structure
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H60 Other luminescence and radiative recombination
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2288443
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"187\";s:8:\"\u0000*\u0000epage\";s:3:\"196\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"GORBAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"I. S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:15:\"MISHINOVA, G. N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2808-6\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:113:\"Optical diagnosis of materials and devices for opto-, micro-, and quantum electronics 1997 (Kiev, 13-15 May 1997)\";s:8:\"\u0000*\u0000title\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"187\";s:8:\"\u0000*\u0000epage\";s:3:\"196\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"GORBAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"I. S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:15:\"MISHINOVA, G. N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2808-6\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:113:\"Optical diagnosis of materials and devices for opto-, micro-, and quantum electronics 1997 (Kiev, 13-15 May 1997)\";s:8:\"\u0000*\u0000title\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"187\";s:8:\"\u0000*\u0000epage\";s:3:\"196\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"GORBAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"I. S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:15:\"MISHINOVA, G. N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2808-6\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:113:\"Optical diagnosis of materials and devices for opto-, micro-, and quantum electronics 1997 (Kiev, 13-15 May 1997)\";s:8:\"\u0000*\u0000title\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"187\";s:8:\"\u0000*\u0000epage\";s:3:\"196\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"GORBAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"I. S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:15:\"MISHINOVA, G. N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2808-6\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:113:\"Optical diagnosis of materials and devices for opto-, micro-, and quantum electronics 1997 (Kiev, 13-15 May 1997)\";s:8:\"\u0000*\u0000title\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"187\";s:8:\"\u0000*\u0000epage\";s:3:\"196\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"GORBAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"I. S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:15:\"MISHINOVA, G. N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2808-6\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:113:\"Optical diagnosis of materials and devices for opto-, micro-, and quantum electronics 1997 (Kiev, 13-15 May 1997)\";s:8:\"\u0000*\u0000title\";s:76:\"The bases of luminescent diagnostic of dislocation structure of SiC crystals\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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