InGaN / GaN double heterostructure leds on HVPE GaN-on-sapphire substrates
- Author
- SMITH, G. M1 ; BOUTROS, K. S1 ; SZEWCZUK, J. W1 ; FLYNN, J. S1 ; PHANSE, V. M1 ; VAUDO, R. P1 ; REDWING, J. M1
[1] Epitronics / ATMI, 7 Commerce Drive, Danbury, CT 06810, United States - Conference title
- Light-emitting diodes : research, manufacturing, and applications II (San Jose CA, 28-29 Janaury 1998)
- Conference name
- Light-emitting diodes : research, manufacturing, and applications. Conference (2 ; San Jose CA 1998-01-28)
- Author (monograph)
- Schubert, E. Fred (Editor)
International Society for Optical Engineering, Bellingham WA, United States (Organiser of meeting) - Source
SPIE proceedings series. 1998, pp 8-16
- ISBN
- 0-8194-2718-7
- Scientific domain
- Electronics; Optics; Physics; Telecommunications
- Publisher
- SPIE, Bellingham WA
- Publication country
- International
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractéristique fonctionnement Composé ternaire Diode électroluminescente Epitaxie Gallium Nitrure Hétérojonction double Indium Nitrure Phase vapeur
- Keyword (en)
- Performance characteristic Ternary compound Light emitting diode Epitaxy Gallium Nitrides Double heterojunction Indium Nitrides Vapor phase
- Keyword (es)
- Característica funcionamiento Compuesto ternario Diodo electroluminescente Epitaxia Galio Nitruro Heterounión doble Indio Nitruro Fase vapor
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2289967
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:1:\"8\";s:8:\"\u0000*\u0000epage\";s:2:\"16\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SMITH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:13:\"BOUTROS, K. S\";i:1;s:14:\"SZEWCZUK, J. W\";i:2;s:11:\"FLYNN, J. S\";i:3;s:12:\"PHANSE, V. M\";i:4;s:11:\"VAUDO, R. P\";i:5;s:13:\"REDWING, J. M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2718-7\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:102:\"Light-emitting diodes : research, manufacturing, and applications II (San Jose CA, 28-29 Janaury 1998)\";s:8:\"\u0000*\u0000title\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:1:\"8\";s:8:\"\u0000*\u0000epage\";s:2:\"16\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SMITH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:13:\"BOUTROS, K. S\";i:1;s:14:\"SZEWCZUK, J. W\";i:2;s:11:\"FLYNN, J. S\";i:3;s:12:\"PHANSE, V. M\";i:4;s:11:\"VAUDO, R. P\";i:5;s:13:\"REDWING, J. M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2718-7\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:102:\"Light-emitting diodes : research, manufacturing, and applications II (San Jose CA, 28-29 Janaury 1998)\";s:8:\"\u0000*\u0000title\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:1:\"8\";s:8:\"\u0000*\u0000epage\";s:2:\"16\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SMITH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:13:\"BOUTROS, K. S\";i:1;s:14:\"SZEWCZUK, J. W\";i:2;s:11:\"FLYNN, J. S\";i:3;s:12:\"PHANSE, V. M\";i:4;s:11:\"VAUDO, R. P\";i:5;s:13:\"REDWING, J. M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2718-7\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:102:\"Light-emitting diodes : research, manufacturing, and applications II (San Jose CA, 28-29 Janaury 1998)\";s:8:\"\u0000*\u0000title\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:1:\"8\";s:8:\"\u0000*\u0000epage\";s:2:\"16\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SMITH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:13:\"BOUTROS, K. S\";i:1;s:14:\"SZEWCZUK, J. W\";i:2;s:11:\"FLYNN, J. S\";i:3;s:12:\"PHANSE, V. M\";i:4;s:11:\"VAUDO, R. P\";i:5;s:13:\"REDWING, J. M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2718-7\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:102:\"Light-emitting diodes : research, manufacturing, and applications II (San Jose CA, 28-29 Janaury 1998)\";s:8:\"\u0000*\u0000title\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:9:\"\u0000*\u0000jtitle\";s:23:\"SPIE proceedings series\";s:9:\"\u0000*\u0000stitle\";s:14:\"SPIE proc. ser\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:1:\"8\";s:8:\"\u0000*\u0000epage\";s:2:\"16\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SMITH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:13:\"BOUTROS, K. S\";i:1;s:14:\"SZEWCZUK, J. W\";i:2;s:11:\"FLYNN, J. S\";i:3;s:12:\"PHANSE, V. M\";i:4;s:11:\"VAUDO, R. P\";i:5;s:13:\"REDWING, J. M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-2718-7\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:102:\"Light-emitting diodes : research, manufacturing, and applications II (San Jose CA, 28-29 Janaury 1998)\";s:8:\"\u0000*\u0000title\";s:74:\"InGaN \/ GaN double heterostructure leds on HVPE GaN-on-sapphire substrates\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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