A novel sputtering oxidation coupling (SOC) method to fabricate VO2 thin film
- Author
- XIAOFENG XU1 ; ANYUAN YIN2 ; XILIANG DU3 ; JIQING WANG4 ; JIADING LIU1 ; XINFENG HE1 ; XINGXING LIU1 ; YILONG HUAN5
[1] Department of Applied Physics, Donghua University, Shanghai 201620, China
[2] Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, China
[3] Electronic Engineering Institute, Hei Longjiang University, Harbin 150080, China
[4] Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, China
[5] College of Textiles, Donghua University, Shanghai 201620, China - Source
Applied surface science. 2010, Vol 256, Num 9, pp 2750-2753, 4 p ; ref : 20 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Metal-insulator transition Sputtering oxidation coupling VO2 thin films
- Keyword (fr)
- Couche mince Oxydation Pulvérisation irradiation Transition métal isolant
- Keyword (en)
- Thin films Oxidation Sputtering Metal-insulator transition
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22907590
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2009.11.022 
https://dx.doi.org/10.1016/j.apsusc.2009.11.022
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