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Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy

Author
SARTEL, C1 ; DHEERAJ, D. L2 ; JABEEN, F1 ; HARMAND, J. C1
[1] CNRS-LPN, Route de Nozay, 91460 Marcoussis, France
[2] Department of Electronics and Telecommunications, Norwegian University of Science and Technology, 7491 Trondheim, Norway
Source

Journal of crystal growth. 2010, Vol 312, Num 14, pp 2073-2077, 5 p ; ref : 20 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
A3. Molecular beam epitaxy B1. Nanomaterials Bl. Gallium compounds
Keyword (fr)
Adatome Arsenic Arséniure de gallium Composé III-V Composé du gallium Croissance cristalline en phase vapeur Epitaxie jet moléculaire Gallium Hétérostructure Longueur diffusion Mécanisme croissance Nanofil Nanomatériau Or Semiconducteur III-V Synthèse nanomatériau Taux croissance 8107 8107V 8110A 8115H GaAs
Keyword (en)
Adatoms Arsenic Gallium arsenides III-V compound Gallium compounds Crystal growth from vapors Molecular beam epitaxy Gallium Heterostructures Scattering lengths Growth mechanism Nanowires Nanostructured materials Gold III-V semiconductors Nanomaterial synthesis Growth rate
Keyword (es)
Compuesto III-V Mecanismo crecimiento Síntesis nanomaterial
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
22913905

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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