Modelling and characterization of SOI devices
- Author
- JAKUBOWSKI, A1 ; JUREZAK, M1 ; ŁUKASIAK, L1
[1] Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland - Conference title
- Physics of semiconductor devices (Delhi, 16-20 September 1997)
- Conference name
- IWPSD : International workshop on the physics of semiconductor devices (9 ; Delhi 1997-12-16)
- Author (monograph)
- Kumar, Vikram (Editor); Agarwal, S.K (Editor)
International Society for Optical Engineering, Bellingham WA, United States (Organiser of meeting) - Source
SPIE proceedings series. 1998 ; 2Vol, pp 1010-1013 ; ref : 13 ref
- ISBN
- 0-8194-2756-X
- Scientific domain
- Electronics; Metrology and instrumentation; Optics; Condensed state physics; Physics; Telecommunications
- Publisher
- SPIE, Bellingham WA
- Publication country
- International
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractéristique fonctionnement Modélisation Technologie silicium sur isolant Transistor MOS Transistor effet champ
- Keyword (en)
- Performance characteristic Modeling Silicon on insulator technology MOS transistor Field effect transistor
- Keyword (es)
- Característica funcionamiento Modelización Tecnología silicio sobre aislante Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2291873
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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