Monocrystalline zinc oxide films grown by atomic layer deposition
- Author
- WACHNICKI, L1 ; KRAJEWSKI, T1 ; LUKA, G1 ; WITKOWSKI, B3 ; KOWALSKI, B1 ; KOPALKO, K1 ; DOMAGALA, J. Z1 ; GUZIEWICZ, M2 ; GODLEWSKI, M1 3 ; GUZIEWICZ, E1
[1] Polish Academy of Sciences, Institute of Physics, al. Lomik6w 32/46, Warszawa 02-668, Poland
[2] Institute of Electron Technology (ITE), al. Lotników 32/46, Warsaw 02-668, Poland
[3] Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warszawa, Poland - Conference title
- Proceedings of the EMRS 2009 Spring Meeting Symposium H: Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films II
- Conference name
- EMRS 2009 Spring Meeting. Symposium H Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films (Strasbourg 2009-06-08)
- Author (monograph)
- CRACIUN, Valentin (Editor)1 2 ; GUILLOUX-VIRY, Maryline (Editor)3 ; ALEXE, Marin (Editor)4 ; COSTA KRÄMER, José L (Editor)5 ; MOSNIER, Jean-Paul (Editor)6
European Materials Research Society (EMRS), Strasbourg, France (Organiser of meeting)
[1] National Institute for Laser, Plasma and Radiation Physics, Bucharest, Romania
[2] University of Florida, United States
[3] University of Rennes 1, France
[4] Max Planck Institute of Microstructure Physics, Halle, Germany
[5] Instituto de Microelectronica de Madrid, Spain
[6] Dublin City University, Ireland - Source
Thin solid films. 2010, Vol 518, Num 16, pp 4556-4559, 4 p ; ref : 18 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Atomic layer deposition Diethylzinc Epitaxy Monocrystalline Zinc oxide
- Keyword (fr)
- Analyse diffraction RX Composé III-V Couche mince Croissance cristalline en phase vapeur Diagramme rotation Diffraction RX Epitaxie Mécanisme croissance Méthode couche atomique Nitrure de gallium Oxyde de zinc Photoluminescence Précurseur Réaction dirigée Semiconducteur III-V Structure cristalline Zinc 6855A 7855 8105E 8115K GaN Zn ZnO
- Keyword (en)
- X-ray diffraction analysis III-V compound Thin films Crystal growth from vapors Rocking curve XRD Epitaxy Growth mechanism Atomic layer method Gallium nitride Zinc oxide Photoluminescence Precursor Template reaction III-V semiconductors Crystal structure Zinc
- Keyword (es)
- Compuesto III-V Diagrama rotación Mecanismo crecimiento Método capa atómica Galio nitruro Zinc óxido Reacción dirigida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22944188
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2009.12.030 
https://dx.doi.org/10.1016/j.tsf.2009.12.030
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