Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
- Author
- PERES, M1 ; NEVES, A. J1 ; MONTEIRO, T1 ; MAGALHAES, S1 2 ; ALVES, E2 ; LORENZ, K2 ; OKUNO-VILA, H3 ; FELIMANN, V4 ; BOUGEROL, C4 ; DAUDIN, B4
[1] Departamento de Física e I3N/Aveiro, Universidade de Aveiro, Aveiro 3810-193, Portugal
[2] Instituto Tecnológico e Nuclear, Sacavém 2686-953, Portugal
[3] CEA Grenoble, Département de Recherche Fondamentale sur la Matière Condensée/SP2M, Grenoble 38054, France
[4] CEA-CNRS, Institut Nanosciences et Cryogénic, 17 rue des Martyrs, Grenoble 38054, France - Conference name
- Wide band gap II-VI and III-V semiconductors. 2009 E-MRS Fall Meeting (Warsaw 2009-09-14)
- Source
Physica status solidi. B. Basic research. 2010, Vol 247, Num 7, pp 1675-1678, 4 p ; ref : 17 ref
- CODEN
- PSSBBD
- ISSN
- 0370-1972
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Diffusion mutuelle Déplacement raie Epaisseur Microscopie fond sombre Microscopie électronique balayage transmission Multicouche Nitrure d'aluminium Nitrure de gallium Paramètre cristallin Photoluminescence Point quantique Propriété optique Recuit thermique AlN GaN
- Keyword (en)
- Interdiffusion Spectral line shift Thickness Dark field microscopy Scanning transmission electron microscopy Multilayers Aluminium nitride Gallium nitride Lattice parameters Photoluminescence Quantum dots Optical properties Thermal annealing
- Keyword (es)
- Difusión mútua Microscopía fondo oscuro Aluminio nitruro Galio nitruro Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 001B70H67H Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22985397
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssb.200983674 
https://dx.doi.org/10.1002/pssb.200983674
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200983674\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:3:\"247\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1675\";s:8:\"\u0000*\u0000epage\";s:4:\"1678\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"PERES\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:11:\"NEVES, A. J\";i:1;s:11:\"MONTEIRO, T\";i:2;s:12:\"MAGALHAES, S\";i:3;s:8:\"ALVES, E\";i:4;s:9:\"LORENZ, K\";i:5;s:13:\"OKUNO-VILA, H\";i:6;s:11:\"FELIMANN, V\";i:7;s:11:\"BOUGEROL, C\";i:8;s:9:\"DAUDIN, B\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200983674\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:3:\"247\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1675\";s:8:\"\u0000*\u0000epage\";s:4:\"1678\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"PERES\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:11:\"NEVES, A. J\";i:1;s:11:\"MONTEIRO, T\";i:2;s:12:\"MAGALHAES, S\";i:3;s:8:\"ALVES, E\";i:4;s:9:\"LORENZ, K\";i:5;s:13:\"OKUNO-VILA, H\";i:6;s:11:\"FELIMANN, V\";i:7;s:11:\"BOUGEROL, C\";i:8;s:9:\"DAUDIN, B\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200983674\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200983674\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:3:\"247\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1675\";s:8:\"\u0000*\u0000epage\";s:4:\"1678\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"PERES\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:11:\"NEVES, A. J\";i:1;s:11:\"MONTEIRO, T\";i:2;s:12:\"MAGALHAES, S\";i:3;s:8:\"ALVES, E\";i:4;s:9:\"LORENZ, K\";i:5;s:13:\"OKUNO-VILA, H\";i:6;s:11:\"FELIMANN, V\";i:7;s:11:\"BOUGEROL, C\";i:8;s:9:\"DAUDIN, B\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200983674\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:3:\"247\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1675\";s:8:\"\u0000*\u0000epage\";s:4:\"1678\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"PERES\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:11:\"NEVES, A. J\";i:1;s:11:\"MONTEIRO, T\";i:2;s:12:\"MAGALHAES, S\";i:3;s:8:\"ALVES, E\";i:4;s:9:\"LORENZ, K\";i:5;s:13:\"OKUNO-VILA, H\";i:6;s:11:\"FELIMANN, V\";i:7;s:11:\"BOUGEROL, C\";i:8;s:9:\"DAUDIN, B\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200983674\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:3:\"247\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1675\";s:8:\"\u0000*\u0000epage\";s:4:\"1678\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"PERES\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:11:\"NEVES, A. J\";i:1;s:11:\"MONTEIRO, T\";i:2;s:12:\"MAGALHAES, S\";i:3;s:8:\"ALVES, E\";i:4;s:9:\"LORENZ, K\";i:5;s:13:\"OKUNO-VILA, H\";i:6;s:11:\"FELIMANN, V\";i:7;s:11:\"BOUGEROL, C\";i:8;s:9:\"DAUDIN, B\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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